Rectification of current responds to incorporation of fullerenes into mixed-monolayers of alkanethiolates in tunneling junctions.
نویسندگان
چکیده
This paper describes the rectification of current through molecular junctions comprising self-assembled monolayers of decanethiolate through the incorporation of C60 fullerene moieties bearing undecanethiol groups in junctions using eutectic Ga-In (EGaIn) and Au conducting probe AFM (CP-AFM) top-contacts. The degree of rectification increases with increasing exposure of the decanethiolate monolayers to the fullerene moieties, going through a maximum after 24 h. We ascribe this observation to the resulting mixed-monolayer achieving an optimal packing density of fullerene cages sitting above the alkane monolayer. Thus, the degree of rectification is controlled by the amount of fullerene present in the mixed-monolayer. The voltage dependence of R varies with the composition of the top-contact and the force applied to the junction and the energy of the lowest unoccupied π-state determined from photoelectron spectroscopy is consistent with the direction of rectification. The maximum value of rectification R = |J(+)/J(-)| = 940 at ±1 V or 617 at ±0.95 V is in agreement with previous studies on pure monolayers relating the degree of rectification to the volume of the head-group on which the frontier orbitals are localized.
منابع مشابه
Rectification of current responds to incorporation of fullerenes into mixed-monolayers of alkanethiolates in tunneling junctions† †Electronic supplementary information (ESI) available. See DOI: 10.1039/c6sc04799h Click here for additional data file.
متن کامل
Charge transport and rectification in arrays of SAM-based tunneling junctions.
This paper describes a method of fabrication that generates small arrays of tunneling junctions based on self-assembled monolayers (SAMs); these junctions have liquid-metal top-electrodes stabilized in microchannels and ultraflat (template-stripped) bottom-electrodes. The yield of junctions generated using this method is high (70-90%). The junctions examined incorporated SAMs of alkanethiolates...
متن کاملMolecular rectification in metal-SAM-metal oxide-metal junctions.
This Article compares the ability of self-assembled monolayers (SAMs) of alkanethiolates with ferrocene (Fc) head groups (SC(11)Fc), and SAMs of alkanethiolates lacking the Fc moiety (SC(10)CH(3) and SC(14)CH(3)), to conduct charge. Ultraflat surfaces of template-stripped silver (Ag(TS)) supported these SAMs, and a eutectic alloy of gallium and indium (EGaIn), covered with a skin of gallium oxi...
متن کاملMechanism of rectification in tunneling junctions based on molecules with asymmetric potential drops.
This paper proposes a mechanism for the rectification of current by self-assembled monolayers (SAMs) of alkanethiolates with Fc head groups (SC(11)Fc) in SAM-based tunneling junctions with ultra-flat Ag bottom electrodes and liquid metal (Ga(2)O(3)/EGaIn) top electrodes. A systematic physical-organic study based on statistically large numbers of data (N = 300-1000) reached the conclusion that o...
متن کاملMechanically and Electrically Robust Self-Assembled Monolayers for Large-Area Tunneling Junctions
This paper examines the relationship between mechanical deformation and the electronic properties of self-assembled monolayers (SAMs) of the oligothiophene 4-([2,2':5',2″:5″,2‴-quaterthiophen]-5-yl)butane-1-thiol (T4C4) in tunneling junctions using conductive probe atomic force microscopy (CP-AFM) and eutectic Ga-In (EGaIn). We compared shifts in conductivity, transition voltages of T4C4 with i...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
- Chemical science
دوره 8 3 شماره
صفحات -
تاریخ انتشار 2017